Non-volatile Memories Workshop 2010
April 11-13, 2010
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Non-volatile Memories Workshop 2010
University of California, San Diego
April 11-13, 2010
Latest Advances and Future Prospects of STT-RAM
Alexander Driskill-Smith
Non-volatile STT-RAM (spin transfer torque random access memory) is a new memory technology that combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM and the non-volatility of Flash with essentially unlimited endurance. This presentation will describe the current status of STT-RAM memory technology, discuss the key technical issues involved in its commercialization, and outline future potential applications and products. Specific aspects of STT-RAM chip performance will be presented and discussed, along with a discussion of STT-RAM's scalability beyond 45 nm.
BIO: Alexander Driskill-Smith is Director of Customer Programs and Process Integration at Grandis. He previously worked on magnetic recording and nanofabrication at IBM Corporation and Hitachi Global Storage Technologies. He holds M.A. and Ph.D. degrees in Physics from the University of Cambridge, U.K.
